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CDIL - NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR

Numéro de référence CJF122
Description NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR
Fabricant CDIL 
Logo CDIL 





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CJF122 fiche technique
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS
CJF122
CJF127
NPN
PNP
TO-220FP Fully Isolated
Plastic Package
General Purpose Darlingtons Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec, R.H.
<30%, TA=25ºC )
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
VCBO
VCEO
VEBO
(1) VISOL (a)
(b)
Ic
IB
PD**
PD
Tj,Tstg
100
100
5
3500
1500
5
8
0.12
30
0.24
2
0.016
- 65 to + 150
V
V
V
VRMS
VRMS
A
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Ambient
Rth (j-a)
62.5
ºC/W
From Junction to Case
Rth (j-c) **
4.1
ºC/W
Lead Temperature for Soldering Purpose
TL
260
ºC
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
(1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package in
Screw Mounting Position (for 1sec, R.H.<30%Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX
UNIT
Collector Emitter Sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
VCEO (sus) *
ICEO
ICBO
IEBO
VCE (sat) *
IC=100mA, IB=0
VCE= 50V, IB=0
VCB= 100V, IE=0
VBE=5V, IC=0
IC=3A, IB=12mA
IC=5A, IB=20mA
100 -
- 10
- 10
- 2.0
- 2.0
- 3.5
V
µA
µA
mA
V
V
Continental Device India Limited
Data Sheet
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