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PDF 2SB1386 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1386 | |
| Descripción | PNP Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
| Logotipo |  |
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2SB1 38 6
TRANSISTOR(PNP)
FEATURES
z Low collector saturation voltage,
z Execllent current-to-gain characteristics
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-5
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50μA,IC=0
ICBO
VCB=-20V,IE=0
IEBO VEB=-5V,IC=0
hFE VCE=-2V,IC=-500mA
VCE(sat) IC=-4A,IB=-100mA
fT VCE=-6V,IC=-50mA,f=30MHz
Cob VCB=-20V,IE=0,f=1MHz
MIN TYP MAX UNIT
-30 V
-20 V
-6 V
-0.5 μA
-0.5 μA
82 390
-1 V
120 MHz
60 pF
CLASSIFICATION OF hFE
Rank
P
Range
82-180
Marking
BHP
Q
120-270
BHQ
R
180-390
BHR
JinYu
semiconductor
www.htsemi.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1386.PDF ] | |
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