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PDF 2SB1386 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1386 | |
| Descripción | SOT-89 Plastic-Encapsulate Transistors | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1386 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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WILLAS
S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V
SOD-123+ PACKAGE
FM120-M+
2SB1386 THRU
FM1200-M+
Pb Free Product
Features
TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses)
design, excellent power dissipation offer
leakage current and thermal resistance.
s
FEATUR• LEoopSwtimpirzoefibleosaurdrfaspcea
moun
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z Low• Lcoowllepocwtoerr sloastsu, rhaigtihoenffvicoieltnacgy.e
z Exe••cHHlliieggnhh tscuucrrugrerernectancpat-aptboaib-ligitlyiat.yi,nlocwhfaorrawcatredrvisotltiacgse drop.
z Pb-•FGreuearpdraincgkfaogr oeviesrvaovltaagileapbrloetection.
RoH• SUltprarohdiguhc-tspfoeredpaswckiticnhgincgo. de suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Hal•ogLeeandf-rfreeee pparortdsumceteftoernpvairconkminegnctaol dsteansduaffridxs“oHf ”
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MAXIMUHMaloRgeAnTfrIeNe GprSodu(Tctaf=or2p5a℃ckinugncloedsessuoffitxh"eHr"wise noted)
SymbolMechanPiacraaml edtearta
Value
VCBO
VCEO
• ECpooxllyec: tUoLr-9B4a-sVe0 Vraotletadgfelame retardant
-30
• Case : Molded plastic, SOD-123H
•
TeCromlliencatlosr:-PElmatiettderteVromltiangaels,
solderable
per
M-I2L0-STD-75
,
0
VEBO
Emitter-BaMseethVoodlt2a0g2e6
-6
IC • PColoanrittinyu: oInudsicCaotelldecbtyorcaCtuhrordeentband
-5
ICP* • MPouulnsteindgCPoolsleitciotonr :CAunryrent
PC • WCeoigllhetc:toArpPporowxeimr aDtiesdsi0p.a0t1io1ngram
-10
0.5
Package outline
SOT-89 SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Unit
V
V
V
A
A
W
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
TJ JunctMionAXTeIMmpUeMratRurAeTINGS AND ELEC1T5R0ICAL CHAR℃ACTERISTICS
TsRtgatings atS2t5o℃ragaemTbeiemntpteermaptuerreature unless otherwise-s5p5e~c1ifi5e0d.
℃
*SSininggleleppuhlassee,PhWal=f 1w0amves, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
ELECTRICAL CHARRATAINCGTSERISTICS (Ta=2S5Y℃MBOuLnFlMe1s20s-MoHtFhMe13r0w-MiHsFeM1s4p0-eMcH iFfMie15d0-)MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
12 13 14 15 16
18 10
115 120
Maximum RePcaurrraemnt ePteeark Reverse Voltage
SymVRbRoMl 2T0est co3n0ditions40 50 60 Min 80 Typ 100 Max 150Unit 200 Vo
Maximum RMS Voltage
CMoalxleimcutmorD-bCaBsleocbkirnegaVkodltaogwen voltage
VRMS
14
21
28
35
42
56
70
105 140 Vo
V(BRV)DCCBO IC=20-50μA,I3E0=0
40
50
60 -30 80
100
150 V 200
Vo
CMoalxleimcutmorA-evemraitgteeFr obrwreaardkRdeocwtifniedvCoultraregnet
V(BR)ICOEO
EPsmuepaiektrtiFemorpr-wobsaaerddsSeonubrrgareteeCaduklordraedontw(J8E.n3DmvEoCs lsmtianeggtlheeohda) lf sine-waveV(BRIF)ESBMO
CToyplliecacltTohrecrmuat-l oRfefscisutarnrceen(tNote 2)
Typical Junction Capacitance (Note 1)
ICRBΘOJA
CJ
EOmpeitrtaetirngcuTet-mopfefrcatuurrereRnatnge
Storage Temperature Range
DC current gain
IEBTOJ
TSTG
hFE
IC=-1mA,IB=0
IE=-50μA,IC=0
VCB=-20V,IE =0
VEB=-5V-5,I5C=to0+125
VCE=-2V,IC=-500mA
1.0-20
30-6
V Am
V Am
40
120
- 65 to +175
82
-0.5
-55 to +15-00.5
390
μA
μA
℃
P
℃
℃
CHARACTERISTICS
CMoalxleimcutmorF-eormwaitrtdeVrosltaagtueraatt1io.0nA vDoCltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VCEV(sFat) IC=-4A,IB=-1000m.5A0
0.70
0.85 -1 0.9 V 0.92 Vo
Maximum Average Reverse Current at @T A=25℃
TRraatnesd iDtiConBlofrcekiqngueVnolctayge
@T A=125℃
fTIR
VCE=-6V,IC=-50mA,f=30MHz
0.5
10 120
MHz
mA
CNoOlTlEeSc:tor output capacitance
Cob VCB=-20V,IE=0,f=1MHz
60 pF
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
C LASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Mar2k0in1g2-06
BHP
BHQ WILLAS BEHLRECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1386.PDF ] | |
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