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PDF FMMTA55 Data sheet ( Hoja de datos )
| Número de pieza | FMMTA55 | |
| Descripción | SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 JANUARY 1996
FEATURES
7
FMMTA55
FMMTA56
* Gain of 50 at IC=100mA
PARTMARKING DETAIL -
FMMTA55 - 2H
FMMTA56 - 2G
FMMTA55R - NB
FMMTA56R - MB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E
C
B
SOT23
FMMTA55 FMMTA56
-60 -80
-60 -80
-4
-500
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMTA55 FMMTA56
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Emitter
V(BR)CEO -60
-80
V IC=-1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -4
-4
V IE=-100µA, IC=0
Breakdown Voltage
Collector-Emitter
Cut-Off Current
ICES
-0.1 -0.1 µA VCE=-60V
Collector-Base
Cut-Off Current
ICBO
Static Forward
hFE
Current Transfer Ratio
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
VBE(on)
50
50
-0.1
-0.25
50
50
-1.2
-0.1 µA
-0.25 V
-1.2 V
VCB=-80V, IE=0
VCB=-60V, IE=0
IC=-10mA, VCE=1V*
IC=-100mA, VCE=1V*
IC=-100mA,
IB=-10mA*
IC=-100mA, VCE=-1V*
Transition
Frequency
fT 100 100 MHz IC=-10mA, VCE=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 177
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