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PDF 2SAR522M Data sheet ( Hoja de datos )
| Número de pieza | 2SAR522M | |
| Descripción | General purpose transistor | |
| Fabricantes | ROHM Semiconductor | |
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General purpose transistor(-20V,-0.2A)
2SAR522M / 2SAR522EB / 2SAR522UB
Structure
PNP silicon epitaxial planar transistor
Features
Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.
Dimensions (Unit : mm)
VMT3
Applications
Switch, LED driver
EMT3F
Abbreviated symbol : PC
Packaging specifications
Package
Type
Packaging Type
Code
Basic ordering
unit (pieces)
2SAR522M
2SAR522EB
2SAR522UB
VMT3
Taping
T2L
8000
EMT3F
Taping
TL
3000
UMT3F
Taping
TL
3000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−20
Collector-emitter voltage VCEO
−20
Emitter-base voltage
VEBO
−5
Collector current
IC
ICP ∗1
−200
−400
Power
2SAR522M,2SAR522EB
dissipation 2SAR522UB
PD ∗2
150
200
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
Unit
V
V
V
mA
mA
mW
mW
°C
°C
UMT3F
(3)
(1) (2)
Abbreviated symbol : PC
2.0
0.32
(3)
0.9
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : PC
Inner circuit
(3)
(1)
(1) Base
(2) Emitter
(2) (3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−20 − − V IC= −1mA
−20 − − V IC= −50μA
−5 − − V IE= −50μA
− − −0.1 μA VCB= −20V
− − −0.1 μA VEB= −5V
− −0.12 −0.30 V IC= −100mA, IB= −10mA
120 − 560 − VCE= −2V, IC= −1mA
− 350 − MHz VCE= −10V, IE=10mA, f=100MHz
− 3 − pF VCB= −10V, IE=0A, f=1MHz
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2010.09 - Rev.A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SAR522M.PDF ] | |
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