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ROHM Semiconductor - Midium Power Transistors

Numéro de référence 2SAR512P
Description Midium Power Transistors
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SAR512P fiche technique
Medium Power Transistors (30V / 2A)
2SAR512P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Type Code
Taping
T100
Basic ordering unit (pieces) 1000
2SAR512P
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
-30
-30
-6
-2
-4
0.5
2
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Unit
V
V
V
A
A
W
W
°C
°C
Dimensions (Unit : mm)
MPT3
(1) (2) (3)
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : MB
Inner circuit (Unit : mm)
(3)
(1)
(1) Base
(2) Collector
(3) Emitter
(2)
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.10 - Rev.A

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