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IRFP450 fiches techniques PDF

IXYS - Standard Power MOSFET

Numéro de référence IRFP450
Description Standard Power MOSFET
Fabricant IXYS 
Logo IXYS 





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IRFP450 fiche technique
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 450
VDSS = 500 V
ID(cont) = 14 A
RDS(on) = 0.40
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500 V
500 V
±20 V
±30 V
14 A
56 A
14 A
19 mJ
3.5 V/ns
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
190 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 8.4 A
GS D
Pulse test, t 300 µs, duty cycle d 2 %
500
2
V
4V
±100 nA
25 µA
250 µA
0.40
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92604E(5/96)
1-2

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