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PDF 2SB1116 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1116 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SB1116
-1 A, -60 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Collector Power Dissipation
Complementary to 2SD1616
CLASSIFICATION OF hFE(1)
Product-Rank 2SB1116-L 2SB1116-K
Range
135~270
200~400
2SB1116-U
300~600
TO-92
GH
J
AD
B
K
E CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-60
-50
-6
-1
0.75
150, -55~150
3
Base
Collector
2
1
Emitter
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter voltage
Collector-Base Capacitance
Transition Frequency
Turn-on time
Storage time
Fall time
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. B
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
VBE
Ccb
fT
TON
TS
TF
-60 - - V IC= -100µA, IE=0
-50 - - V IC= -1mA, IB=0
-6 - - V IE= -100µA, IC=0
- - -0.1 µA VCB= -60V, IE=0
- - -0.1 µA VEB= -6V, IC=0
135 - 600
VCE= -2V, IC= -0.1A
81 -
-
VCE= -2V, IC= -1A
- - -0.3 V IC= -1A, IB= -50mA
- - -1.2 V IC= -1A, IB= -50mA
-0.6 - -0.7 V VCE= -2V, IC= -0.05A
- 25 - pF VCB = -10V, IE=0, f=1MHz
70 -
- MHz VCE = -2V, IC = -0.1A
- 0.07 -
- 0.7 -
- 0.07 -
us VCC= -10V, IC= -0.1A, IB1= -IB2= -0.01A
VBE(off) = 2 ~ 3V
Any changes of specification will not be informed individually.
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