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IPU50R2K0CE fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPU50R2K0CE
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPU50R2K0CE fiche technique
IPD50R2K0CE,IPU50R2K0CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
DPAK
tab
2
1
3
IPAK
tab
12 3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
2
ID 3.6 A
Qg.typ
6
nC
ID,pulse
6.1
A
Eoss@400V
0.62
µJ
Type/OrderingCode
IPD50R2K0CE
IPU50R2K0CE
Package
PG-TO 252
PG-TO 251
Marking
50S2K0CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.3,2016-06-13

PagesPages 14
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