|
|
Numéro de référence | IPD50R1K4CE | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
IPD50R1K4CE,IPU50R1K4CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
DPAK
tab
2
1
3
IPAK
tab
12 3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
1.4
Ω
ID 4.8 A
Qg.typ
8.2
nC
ID,pulse
8.8
A
Eoss@400V
0.79
µJ
Type/OrderingCode
IPD50R1K4CE
IPU50R1K4CE
Package
PG-TO 252
PG-TO 251
Marking
50S1K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.4,2016-06-13
|
|||
Pages | Pages 14 | ||
Télécharger | [ IPD50R1K4CE ] |
No | Description détaillée | Fabricant |
IPD50R1K4CE | MOSFET ( Transistor ) | Infineon |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |