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PDF IPD50P04P4L-11 Data sheet ( Hoja de datos )
| Número de pieza | IPD50P04P4L-11 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPD50P04P4L-11
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
Product Summary
V DS
R DS(on),max
ID
-40 V
10.6 mW
-50 A
PG-TO252-3-313
Type
IPD50P04P4L-11
Package
Marking
PG-TO252-3-313 4P04L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V1)
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D= -25A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
-50
-40
-200
18
-50
±163)
58
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
06.08.2010
1 page  
IPD50P04P4L-11
5 Typ. output characteristics
I D = f(V DS); T j = 25°C
parameter: V GS
200
-10 V
180
-5 V
160
140
-4.5 V
120
100
80 -4 V
60
-3.5 V
40
20 -3 V
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
160
5
140
120
100
80
60
40
20
0
1
175 °C
25 °C
-55 °C
234
-V GS [V]
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25°C
parameter: V GS
20
-4V
-4.5V
15 -5V
10
-10V
5
6 0 30 60 90 120 150 180
-I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -50A; V GS = -10V
14
13
12
11
10
9
8
7
6
5
5
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
06.08.2010
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD50P04P4L-11.PDF ] | |
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