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PDF IPD50P03P4L-11 Data sheet ( Hoja de datos )
| Número de pieza | IPD50P03P4L-11 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPD50P03P4L-11
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
R DS(on),max
ID
-30 V
10.5 mΩ
-50 A
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
PG-TO252-3-11
Type
IPD50P03P4L-11
Package
Marking
PG-TO252-3-11 4P03L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V1)
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D= -25A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
-50
-42
-200
100
-50
+5/-16
58
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2009-07-29
1 page  
IPD50P03P4L-11
5 Typ. output characteristics
I D = f(V DS); T j = 25°C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25°C
parameter: V GS
200
-10 V
180
160
20
-5 V
-4V
-4.5V
-5V
140
15
120
-4.5 V
100
80 -4 V
60 10
40 -3.5 V
-10V
20
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
-3 V
56
5
0 30 60 90 120 150
-I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -50A; V GS = -10V
180
200 13
180
160
-55 °C
25 °C
175 °C
12
140 11
120
10
100
80 9
60
8
40
20 7
0
0123456
-V GS [V]
6
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2009-07-29
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD50P03P4L-11.PDF ] | |
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