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IPD50N04S3-09 fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPD50N04S3-09
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPD50N04S3-09 fiche technique
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD50N04S3-09
Product Summary
V DS
R DS(on),max
ID
40 V
9 m
50 A
PG-TO252-3-11
Type
IPD50N04S3-09
Package
Marking
PG-TO252-3-11 3N0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.1
page 1
Value
50
43
200
140
50
±20
63
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2009-11-03

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