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IPD50N03S4L-06 fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPD50N03S4L-06
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPD50N03S4L-06 fiche technique
OptiMOS®-T2 Power-Transistor
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD50N03S4L-06
Product Summary
V DS
R DS(on),max
ID
30 V
5.5 mW
50 A
PG-TO252-3-11
Type
IPD50N03S4L-06
Package
Marking
PG-TO252-3-11 4N03L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=50A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
50
50
200
36
50
±16
56
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
-
Rev. 1.1
page 1
2010-10-05

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