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IPD50N03S2-07 fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPD50N03S2-07
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPD50N03S2-07 fiche technique
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD50N03S2-07
Product Summary
V DS
R DS(on),max
ID
30 V
7.3 m
50 A
PG-TO252-3-11
Type
IPD50N03S2-07
Package
Marking
PG-TO252-3-11 PN0307
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=50A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
200
250
±20
136
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18

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