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PDF IPD49CN10NG Data sheet ( Hoja de datos )
| Número de pieza | IPD49CN10NG | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD49CN10NG (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Product Summary
V DS
R DS(on),max (TO252)
ID
100 V
49 mΩ
20 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB50CN10N G
IPD49CN10N G
IPI50CN10N G
IPP50CN10N G
Package
Marking
PG-TO263-3
50CN10N
PG-TO252-3
49CN10N
PG-TO262-3
50CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=20 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
PG-TO220-3
50CN10N
Value
20
14
80
29
6
±20
44
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.04
page 1
2008-03-10
Downloaded from Elcodis.com electronic components distributor
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
10 V 8 V
7V
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
120
100
5 V 5.5 V
6V
6.5 V
40
6.5 V
6V
20
5.5 V
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
4
80
60
7V
8V
40 10 V
20
0
5 0 10 20
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
40
30
25
40
20
30
20
175 °C
15
10
10 25 °C
5
0
0
Rev. 1.04
24
V GS [V]
Downloaded from Elcodis.com electronic components distributor
6
0
80
page 5
10 20
I D [A]
30
2008-03-10
5 Page 
PG-TO252-3: Outline
IPB50CN10N G IPD49CN10N G
IPI50CN10N G IPP50CN10N G
Rev. 1.04
Downloaded from Elcodis.com electronic components distributor
page 11
2008-03-10
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IPD49CN10NG.PDF ] | |
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