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Número de pieza | IPP80P03P3L-04 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
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IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
OptiMOS-P Power-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• Automotive AEC Q101 qualified
P- TO262 -3-1
Product Summary
VDS -30 V
RDS(on) max. SMD version
4
mΩ
ID -80 A
P- TO263 -3-2
P- TO220 -3-1
• Green package (lead free)
• MSL1 up to 260°C
peak reflow temperature
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
IPP80P03P3L-04
Package
Ordering Code
P- TO220 -3-1 -
Marking
3P03L04
Gate
pin1
Drain
pin 2
Source
pin 3
IPB80P03P3L-04 P- TO263 -3-2 -
3P03L04
IPI80P03P3L-04 P- TO262 -3-1 -
3P03L04
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=-80 A , VDD=-25V, RGS=25Ω
ID
ID puls
EAS
Reverse diode dv/dt
dv/dt
IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
VGS
Power dissipation
TC=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
-80
-80
-320
432
-6
±20
200
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2004-03-04
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IPP80P03P3L-04.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPP80P03P3L-04 | Power-Transistor | Infineon |
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