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IPB100P03P3L-04 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPB100P03P3L-04
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPB100P03P3L-04 fiche technique
OptiMOS®-P Trench Power-Transistor
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
Product Summary
V DS -30 V
Features
• P-channel - Logic Level - Enhancement mode
R DS(on),max (SMD version)
4 m
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
I D -100 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• Green package (RoHS Compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
• Intended for reverse battery protection
Type
IPB100P03P3L-04
IPI100P03P3L-04
IPP100P03P3L-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3P03L04
3P03L04
3P03L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2)
ID
T C=25°C,
V GS=-10V
I D,pulse
T C=100°C,
V GS=-10V2)
T C=25°C
Avalanche energy, single pulse
E AS I D=-80A
Gate source voltage
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
gate
pin 1
drain
pin 2
source
pin 3
Value
-100
-100
-400
450
-16 / +5
200
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.1
page 1
2007-09-25

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