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Numéro de référence | NAND512R4A2D | ||
Description | SLC NAND flash memories | ||
Fabricant | Numonyx | ||
Logo | |||
NAND512xxA2D
512-Mbit, 528-byte/264-word page,
1.8 V/3 V, SLC NAND flash memories
Features
High density SLC NAND flash memories
– 512 Mbit memory array
– Cost effective solutions for mass
storage applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V, 3 V
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
Block size
– x8 device: (16 K + 512 spare) bytes
– x16 device: (8 K + 256 spare) words
Page read/program
– Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
– Page program time: 200 µs (typ)
Copy back program mode
Fast block erase: 1.5 ms (typ)
Status register
Electronic signature
Chip Enable ‘don’t care’
Hardware data protection: program/erase
locked during power transitions
Security features
– OTP area
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9 x 11 x 1.05 mm (ZA)
– Serial number (unique ID)
Data integrity
– 100,000 program/erase cycles (with
ECC)
– 10 years data retention
RoHS compliant packages
Development tools
– Error correction code models
– Bad blocks management and wear
leveling algorithms
– Hardware simulation models
Table 1.
Device summary
NAND512xxA2D
NAND512R3A2D
NAND512R4A2D
NAND512W3A2D
NAND512W4A2D
July 2010
210217 - Rev 9
1/52
www.numonyx.com
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Pages | Pages 30 | ||
Télécharger | [ NAND512R4A2D ] |
No | Description détaillée | Fabricant |
NAND512R4A2C | (NAND512xxA2C) NAND Flash Memories | STMicroelectronics |
NAND512R4A2C | NAND Flash Memories | Numonyx |
NAND512R4A2D | SLC NAND flash memories | Numonyx |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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