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SeCoS - NPN Plastic Encapsulated Transistor

Numéro de référence C1675
Description NPN Plastic Encapsulated Transistor
Fabricant SeCoS 
Logo SeCoS 





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C1675 fiche technique
Elektronische Bauelemente
2SC1675
0.05 A , 50 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Collector Current
General Purpose Switching and Amplification
CLASSIFICATION OF hFE
Product-Rank 2SC1675-R
Range
40~80
2SC1675-O
70~140
2SC1675-Y
120~240
TO-92
GH
J
AD
Emitter
Base
Collector
B
K
E CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
50
30
5
50
625
200
150, -55~150
Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
50
-
-
V IC=10μA, IE=0
V(BR)CEO
30
-
-
V IC=5mA, IB=0
V(BR)EBO
5
-
-
V IE=10μA, IC=0
ICBO - - 100 nA VCB=50V, IE=0
IEBO - - 100 nA VEB=5V, IC=0
hFE 40 - 240
VCE=6V, IC=1mA
VCE(sat) - - 0.3 V IC=10mA, IB=1mA
VBE - - 0.75 V VCE=6V, IC=1mA
fT
150 -
- MHz VCE=6V, IC=1mA
Cob - - 2.5 pF VCB=6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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