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GA200SA60U fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence GA200SA60U
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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GA200SA60U fiche technique
PD -50066A
INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60U
Ultra-FastTM Speed IGBT
Features
UltraFast: Optimized for minimum saturation voltage
and operating frequencies up to 40 kHz in hard
switching, > 200 kHz in resonant mode
Very low conduction and switching losses
Fully isolate package ( 2,500 Volt AC/RMS)
Very low internal inductance ( 5 nH typ.)
Industry standard outline
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.60V
@VGE = 15V, IC = 100A
Benefits
Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
Lower overall losses available at frequencies 20kHz
Easy to assemble and parallel
Direct mounting to heatsink
Lower EMI, requires less snubbing
Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentR
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
S O T -2 2 7
Max.
600
200
100
400
400
± 20
160
2500
500
200
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
mJ
V
W
°C
Thermal Resistance
RθJC
RθCS
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
0.05
30
Max.
0.25
–––
–––
Units
°C/W
gm
1
4/24/2000

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