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PDF HX8205A Data sheet ( Hoja de datos )
| Número de pieza | HX8205A | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Husintent | |
| Logotipo |  |
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HX8205A
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HX8205A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 19.5V,ID = 6A
RDS(ON) <37mΩ @ VGS=2.5V
RDS(ON) < 27mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery protection
● Load switch
● Power management
D1 D2
G1 G2
S1 S2
Schematic diagram
Marking and pin Assignment
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
8205A
HX8205A
TSSOP-8
Ø330mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Tape width
12mm
Quantity
3000 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
19.5
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
HX8205A N-channel MOSFET
Rever1.0
1 www.husintent.com
1 page  
HX8205A
VDS Drain-Source Voltage (V)
Figure 13: Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14: Normalized Maximum Transient Thermal Impedance
HX8205A N-channel MOSFET
Rever1.0
5 www.husintent.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HX8205A.PDF ] | |
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