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Numéro de référence | HX5N80 | ||
Description | N-Channel MOSFET | ||
Fabricant | TIANJIN HUANXIN TECHNOLOGY | ||
Logo | |||
HX5N80
4.8 Amps,800Volts
N-Channel MOSFET
■ Description
The HX5N80(C) N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
z RDS(ON) = 2.6Ω@VGS = 10 V
z Low gate charge ( typical 25nC)
z High ruggedness
z Fast switching capability
z Avalanche energy specified
z Improved dv/dt capability
■ Symbol
Power MOSFET
■ Ordering Information
Order Number
Normal
Lead Free Plating
HX5N80(C)-TA3-T
HX5N80(C)L-TA3-T
HX5N80(C)-TF3-T
HX5N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
HX5N80(C)L-TA3-T
(1)T:Tube,R:Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Plating
(2)TA3:TO-220,TF3:TO-220F
(3)L:Lead Free Plating Blank:Pb/Sn
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet Continuous
Drain Current Pulsed
Tc=25℃
Tc=100℃
(Note 1)
VDSS
VGSS
ID
IDP
800
±30
4.8 4.8*
3.04 3.04
19.2
19.2*
Avalanche Energy
Peak Diode Recovery dv/dt
Repetitive
(Note 1)
Single Pulse (Note 2)
(Note 3)
EAR
EAS
dv/dt
14
590
4.0
Total Power Dissipation
Tc=25℃
Derate above 25℃
PD
140 48
1.12 0.39
Junction Temperature
TJ +150
Storage Temperature
*Drain current limited by maximum junction temperature.
TSTG
-55~+150
Packing
Tube
Tube
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
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Pages | Pages 5 | ||
Télécharger | [ HX5N80 ] |
No | Description détaillée | Fabricant |
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