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Vishay - Monolithic N-Channel JFET Dual

Numéro de référence 2N3958
Description Monolithic N-Channel JFET Dual
Fabricant Vishay 
Logo Vishay 





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2N3958 fiche technique
2N3958
Vishay Siliconix
Monolithic N-Channel JFET Dual
PRODUCT SUMMARY
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS)
–1.0 to –4.5
–50
1
IG Max (pA)
–50
jVGS1 – VGS2j Max (mV)
25
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise: 9 nV⁄√Hz
D High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High Speed Comparators
D Impedance Converters
DESCRIPTION
The low cost 2N3958 JFET dual is designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see 2N5196/5197/5198/5199, the
low-noise U/SST401 series, the high-gain 2N5911/5912, and
the low-leakage U421/423 data sheets.
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
Top View
S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70256
S-04031—Rev. B, 04-Jun-01
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
www.vishay.com
8-1

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