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FTA10N60GZ fiches techniques PDF

ark - 600V N-Channel MOSFET

Numéro de référence FTA10N60GZ
Description 600V N-Channel MOSFET
Fabricant ark 
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FTA10N60GZ fiche technique
600V N-Channel MOSFET
General Features
Low ON Resistance
Low Gate Charge (typical 54nC)
Fast Switching
100% Avalanche Tested
RoHS Compliant
Halogen-free available
Applications
High Efficiency SMPS
Adaptor/Charger
Active PFC
LCD Panel Power
FTP10N60/FTA10N60
BVDSS
600V
RDS(ON) (Max.)
0.75
ID
10.0A
Ordering Information
Part Number Package
FTP10N60
TO-220
FTP10N60G
TO-220
FTA10N60
TO-220F
FTA10N60G
TO-220F
FTA10N60Z
TO-220FG
FTA10N60GZ TO-220FG
Marking
FTP10N60
FTP10N60G
FTA10N60
FTA10N60G
FTA10N60Z
FTA10N60GZ
Remark
RoHS
Halogen-free
RoHS
Halogen-free
RoHS
Halogen-free
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-to-Source Voltage[1]
ID Continuous Drain Current
ID@100Continuous Drain Current
IDM Pulsed Drain Current, VGS@10V[2]
Power Dissipation
PD Derating Factor above 25
TC=25unless otherwise specified
FTP10N60
FTA10N60
Unit
600 V
10.0 10.0*
Figure 3
A
Figure 6
156 50 W
1.25 0.4 W/
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=12mH, ID=10A
Peak Diode Recovery dv/dt[3]
±30 V
600 mJ
4.5 V/ns
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
TJ and TSTG Operating and Storage Temperature Range
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
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Rev. 2.1 May. 2012

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