FTA10N60C Datasheet PDF - IPS
| Part Number | FTA10N60C | |
| Description | N-Channel MOSFET | |
| Manufacturers | IPS | |
| Logo |  |
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FTP10N60C
FTA10N60C
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• TV Main Power
• SMPS Power Supply
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTP10N60C
FTA10N60C
PACKAGE
TO-220
TO-220F
VDSS
600 V
RDS(ON) (Max.)
0.85 Ω
ID
10 A
D
BRAND
FTP10N60C
FTA10N60C
GDS
TO-220 G DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP10N60C FTA10N60C
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
10.0 10.0*
Figure 3
Figure 6
216 50
1.72 0.40
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=6.7 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
225
Figure 8
3.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP10N60C FTA10N60C
0.58 2.5
62 100
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2007 InPower Semiconductor Co., Ltd.
FTP10N60C/FTA10N60C REV. A. Oct. 2007
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Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE
FOR TEMPERATURES
MAY LIMIT CURRENT IN
THIS REGION
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0----–-----T---C---
125
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
25
PULSE DURATION = 380 µs
DUTY CYCLE = 0.5% MAX
20 VDS = 30 V
15
10
5
0
7
+150 oC
+25 oC
-55 oC
4 56
VGS, Gate-to-Source Voltage (V)
7
Figure 8. Unclamped Inductive
Switching Capability
100
10 STARTING TJ = 25 oC
STARTING TJ = 150 oC
1
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
1.1
PULSE DURATION = 10 µs
1.0
DUTY CYCLE = 0.5% MAX
TC=25°C
0.9
0.8
VGS = 10V
0.7
0.6
0.5
0
5 10 15 20 25 30
ID, Drain Current (A)
©2007 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
PULSE DURATION = 10 µs
0.50
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.0A
0.25
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
FTP10N60C/FTA10N60C REV. A . Oct. 2007
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