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FTP06N60C fiches techniques PDF

IPS - N-Channel MOSFET

Numéro de référence FTP06N60C
Description N-Channel MOSFET
Fabricant IPS 
Logo IPS 





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FTP06N60C fiche technique
FTP06N60C
FTA06N60C
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• TV Main Power
• SMPS Power Supply
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTP06N60C
FTA06N60C
PACKAGE
TO-220
TO-220F
BRAND
FTP06N60C
FTA06N60C
VDSS
600 V
RDS(ON) (Max.)
1.25 Ω
ID
6A
D
GDS
TO-220 G DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP06N60C FTA06N60C
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
6.0 6.0*
Figure 3
Figure 6
119 31
0.95 0.25
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=6.7 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
150
Figure 8
3.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP06N60C FTA06N60C
1.05 4.0
62 100
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2008 InPower Semiconductor Co., Ltd.
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FTP06N60C/FTA06N60C REV. A. Mar. 2008

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