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FTP04N60D Datasheet دیتاشیت PDF دانلود

دیتاشیت - IPS - N-Channel MOSFET

شماره قطعه FTP04N60D
شرح مفصل N-Channel MOSFET
تولید کننده IPS 
آرم IPS 


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FTP04N60D شرح
FTP04N60D
FTA04N60D
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• Charger
• SMPS Standby Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP04N60D
FTA04N60D
PACKAGE
TO-220
TO-220F
BRAND
FTP04N60D
FTA04N60D
VDSS
600 V
RDS(ON) (Max.)
2.2 :
ID
4.0 A
D
GDS
G
TO-220
DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP04N60D FTA04N60D
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
4.0 4.0*
Figure 3
Figure 6
75 28
0.59
0.22
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=4.0 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
245
Figure 8
5.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device
Thermal Resistance
Symbol
Parameter
FTP04N60D FTA04N60D
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
1.7
62
4.5
100
Units
Test Conditions
oC/W
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP04N60D/FTA04N60D REV. C. Jun. 2010

قانون اساسیصفحه 9
دانلود [ FTP04N60D دیتاشیت ]



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