FTP04N60D Datasheet PDF - IPS
| Part Number | FTP04N60D | |
| Description | N-Channel MOSFET | |
| Manufacturers | IPS | |
| Logo |  |
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There is a preview and FTP04N60D download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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FTP04N60D
FTA04N60D
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• Charger
• SMPS Standby Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP04N60D
FTA04N60D
PACKAGE
TO-220
TO-220F
BRAND
FTP04N60D
FTA04N60D
VDSS
600 V
RDS(ON) (Max.)
2.2 :
ID
4.0 A
D
GDS
G
TO-220
DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP04N60D FTA04N60D
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
4.0 4.0*
Figure 3
Figure 6
75 28
0.59
0.22
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=4.0 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
245
Figure 8
5.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device
Thermal Resistance
Symbol
Parameter
FTP04N60D FTA04N60D
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
1.7
62
4.5
100
Units
Test Conditions
oC/W
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP04N60D/FTA04N60D REV. C. Jun. 2010
|
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Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE
FOR TEMPERATURES
MAY LIMIT CURRENT IN
THIS REGION
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
, = , -----------–-----7---&-
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
10
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
8 VDS = 30 V
6
4
+150 oC
+25 oC
2 -55 oC
0
74 567
VGS, Gate-to-Source Voltage (V)
Figure 8. Unclamped Inductive
Switching Capability
100
10
STARTING TJ = 25 oC
STARTING TJ = 150 oC
1
1E-6
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If Rz 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
5.5
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
TC=25°C
4.5
3.5
2.5
1.5
0
VGS = 15V
12
34
ID, Drain Current (A)
5
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
PULSE DURATION = 10 μs
0.50
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.4 A
0.25
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
©2010 InPower Semiconductor Co., Ltd.
Page 5 of 9
FTP04N60D/FTA04N60D REV. C. Jun. 2010
Preview 5 Page |
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| Information | Total 9 Pages | |
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