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PDF FTP08N06A Data sheet ( Hoja de datos )
| Número de pieza | FTP08N06A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
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FTP08N06A
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP08N06A
PACKAGE
TO-220
BRAND
FTP08N06A
Pb Lead Free Package and Finish
VDSS
55V
RDS(ON) (Max.)
8 mΩ
ID
120A
D
G
DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=0.27 mH, ID=75 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP08N06A
55
120*
Figure 3
Figure 6
230
1.54
± 20
760
Figure 8
5.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
©2009 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Page 1 of 11
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175oC.
1 cubic foot chamber, free air.
FTP08N06A REV. A Nov. 2009
1 page  
Figure 6. Maximum Peak Current Capability
1000
TRANSCONDUCTANCE
100 MAY LIMIT CURRENT IN
THIS REGION
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 1---5---0-1---2-–--5---T---C-
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
140
PULSE DURATION = 10 µs
120
DUTY CYCLE = 0.5% MAX
TC=25°C
100
80
60
40 +175 oC
+25 oC
20 -55 oC
0
3.0
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Figure 8. Unclamped Inductive Switching
Capability
1000
100
STARTING TJ = 25 oC
STARTING TJ = 150 oC
10
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
0.014
0.012
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.010
0.008
VGS = 10V
0.006
0
50 100 150 200
ID, Drain Current (A)
250
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-75 -50 -25 0
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 60A
25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
©2009 InPower Semiconductor Co., Ltd.
Page 5 of 11
FTP08N06A REV. A Nov. 2009
5 Page 
Disclaimers:
InPower Semiconductor Co., Ltd (IPS) reserves the right to make changes without notice in order to improve reliability,
function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant
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Testing, reliability and quality control are used to the extent IPS deems necessary to support this warrantee. Except where
agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed.
InPower Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit designs described
herein. Customers are responsible for their products and applications using IPS’s components. To minimize risk, customers
must provide adequate design and operating safeguards.
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for that product or service voids all express or implied warrantees for the associated IPS’s product or service and is unfair and
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Life Support Policy:
InPower Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support devices or
systems without the expressed written approval of InPower Semiconductor Co., Ltd.
As used herein:
1. Life support devices or systems are devices or systems which:
a. are intended for surgical implant into the human body,
b. support or sustain life,
c. whose failure to perform when properly used in accordance with instructions
for used provided in the labeling, can be reasonably expected to result in significant
injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
©2009 InPower Semiconductor Co., Ltd.
Page 11 of 11
FTP08N06A REV. A Nov. 2009
11 Page | ||
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| PDF Descargar | [ Datasheet FTP08N06A.PDF ] | |
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