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PDF FTP18N06N Data sheet ( Hoja de datos )
| Número de pieza | FTP18N06N | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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FTP18N06N
N-Channel Trench MOSFET
Applications:
•Automotive
•DC Motor Control
•Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP18N06N
PACKAGE
TO-220
BRAND
FTP18N06N
Pb Lead Free Package and Finish
VDSS
60V
RDS(ON) (Max.)
18 mΩ
ID
55A
D
GDS
Package
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
Maximum
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
60
55
Figure 3
Figure 6
130
0.87
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=8.0 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 20
320
Figure 8
3.0
V
mJ
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 175
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
©2008 InPower Semiconductor Co., Ltd.
Maximum
1.15
62
Page 1 of 9
Units
oC/W
Test Conditions
Drain Lead soldered to water cooled
heatsink, PD adjusted for a peak junc-
tion temperature of +175oC.
1 cubic foot chamber, free air.
FTP18N06N REV. A. May. 2008
1 page  
1000
100
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 1---5---0-1---2-–--5--T----C-
VGS = 10V
10
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
120 PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
100 VDS = 30 V
80
60
40
20
0
0
+150 oC
+25 oC
-55 oC
24 6 8
VGS, Gate-to-Source Voltage (V)
10
Figure8. Unclamped Inductive
Switching Capability
1000
100
10
STARTING TJ = 150 oC
STARTING TJ = 25 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1
1E-6
10E-6 100E-6 1E-3
10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
0.06
0.05
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.04
VGS = 10V
0.03
VGS = 20V
0.02
0.01
0
25 50 75 100 125 150 175 200
ID, Drain Current (A)
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
-75 -50 -25
0
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 55A
25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
©2008 InPower Semiconductor Co., Ltd.
Page 5 of 9
FTP18N06N REV. A. May. 2008
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FTP18N06N.PDF ] | |
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