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Numéro de référence | 2SC3199 | ||
Description | NPN Transistor | ||
Fabricant | JCST | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC3199 TRANSISTOR (NPN)
FEATURES
z High Current Capability
z High DC Current Gain
z Small Package
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
APPLICATIONS
z Audio Amplifier Applications
z AM Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
BDTICIC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value
50
50
5
0.15
Unit
V
V
V
A
PC Collector Power Dissipation
400 mW
RθJA
Thermal Resistance From Junction To Ambient
312
℃/W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=6V, IC=2mA
IC=100mA,IB=10mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=1mA
Min Typ Max Unit
50 V
50 V
5V
0.1 μA
0.1 μA
70 700
0.25 V
3.5 pF
80 MHz
CLASSIFICATION OF hFE
RANK
O
RANGE
70-140
Y
120-240
GR
200-400
BL
300-700
www.BDTIC.com/jcst
A,Dec,2010
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Pages | Pages 1 | ||
Télécharger | [ 2SC3199 ] |
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