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Taiwan Semiconductor - Glass Passivated Single-Phase Bridge Rectifier

Numéro de référence GBU604
Description Glass Passivated Single-Phase Bridge Rectifier
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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GBU604 fiche technique
GBU601 thru GBU607
Taiwan Semiconductor
CREAT BY ART
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
- Ideal for printed circuit board
- High case dielectric strength of 1500 VRMS
- High surge current capability
- Typical IR less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: GBU
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Polarity: As marked
Weight: 4 g (approximately)
GBU
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
GBU GBU GBU GBU GBU GBU
SYMBOL
601 602 603 604 605 606
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800
Maximum RMS voltage
VRMS
35 70 140 280 420 560
Maximum DC blocking voltage
VDC 50 100 200 400 600 800
Maximum average forward rectified current
IF(AV)
6
Peak forward surge current,
8.3 ms single half sine-wave
IFSM
175
Rating of fusing ( t<8.3ms)
I2t 127
Maximum Instantaneous Forward Voltage (Note 1)
IF= 3 A
IF= 6 A
VF
1.0
1.1
Maximum reverse current @ rated VR TJ=25
TJ=125
IR
5
500
Typical junction capacitance per leg (Note 2)
Cj
211
94
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
RθjC
RθjA
TJ
TSTG
2
21
- 55 to +150
- 55 to +150
Note 2: Measured at 1MHz and applied Reverse bias of 4.0V DC
GBU
607
1000
700
1000
UNIT
V
V
V
A
A
A2s
V
μA
pF
OC/W
OC
OC
Document Number: DS_D1311028
Version: H13

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