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Numéro de référence | FDBL9401_F085 | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FDBL9401_F085
N-Channel PowerTrench® MOSFET
40 V, 300 A, 0.65 mΩ
May 2014
Features
Typical RDS(on) = 0.5 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
D
G
S
For current package drawing, please refer to the Fairchild web‐
site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
300
See Figure 4
1064
429
2.86
-55 to + 175
0.35
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 84A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDBL9401
Device
FDBL9401_F085
Package
MO-299A
-
-
-
©2014 Fairchild Semiconductor Corporation
FDBL9401_F085 Rev. C2
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FDBL9401_F085 ] |
No | Description détaillée | Fabricant |
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