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3DD5011A9 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Huajing Microelectronics - Silicon NPN Bipolar Transistor

شماره قطعه 3DD5011A9
شرح مفصل Silicon NPN Bipolar Transistor
تولید کننده Huajing Microelectronics 
آرم Huajing Microelectronics 





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3DD5011A9 شرح
Huajing Discrete Devices
R
Silicon NPN Bipolar Transistor for Low-frequency
Amplification
3DD5011A9
1 Description
3DD5011A9, silicon NPN low frequency power
transistor, is used to colour TV switching regulator.
PackageTO-220F.
2 Characteristics
Low switching power dissipation
Low reversing leaking current
Good high-temperature characteristic
Good current characteristic
High reliability
3 Application
The device is mainly used in 14 and
21 inch colour TV switching regulator.
Typical Data
VCEO
IC
PtotTC=25℃)
600
10
40
V
A
W
12
3
1. B 2. C 3. E
Equivalent circuit
C
B
E
The name and content of poisonous and harmful material in products
Part’s Name
hazardous substance
CONTENT
Pb
0.1%
Hg
0.1%
Cd
0.01%
Cr(VI)
0.1%
PBB
0.1%
PBDE
0.1%
Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder
× ○○ ○ ○○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the
allowed range of Eurogroup’s ROHS.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 / 5 2008

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