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PDF HD8205-LOW Data sheet ( Hoja de datos )
| Número de pieza | HD8205-LOW | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | HI-DEVICE | |
| Logotipo |  |
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HD8205-LOW
N-Channel Enhancement Mode Power MOSFET
Description
The 8205-LOW uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 20V, ID = 6A
RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 20mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D1
G1
G2
D2
S1 S2
Schematic diagram
Application
●Battery protection
●Load switch
●Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=19.5V,VGS=0V
Min Typ Max Unit
20 21
--
-
1
V
μA
1
1 page  
HD8205-LOW
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HD8205-LOW.PDF ] | |
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