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Número de pieza | GT50JR22 | |
Descripción | Silicon N-Channel IGBT | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT50JR22 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Discrete IGBTs Silicon N-Channel IGBT
GT50JR22
GT50JR22
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.05 µs (typ.) (IC = 50 A)
FWD : trr = 0.35 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
(6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
1 2012-10-15
Rev.1.0
1 page GT50JR22
Fig. 8.7 Switching Time - RG
Fig. 8.8 rth(j-c) - tw
(Guaranteed Maximum)
Fig. 8.9 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.10 IF - VF
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2012-10-15
Rev.1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet GT50JR22.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT50JR22 | Silicon N-Channel IGBT | Toshiba |
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