DataSheetWiki


G6849-01 fiches techniques PDF

Hamamatsu Corporation - InGaAs PIN photodiode

Numéro de référence G6849-01
Description InGaAs PIN photodiode
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





1 Page

No Preview Available !





G6849-01 fiche technique
InGaAs PIN photodiodes
G6849 series
Quadrant type
Features
Photosensitive area
G6849 : φ2 mm quadrant element
G6849-01: φ1 mm quadrant element
Low noise
High reliability
Applications
Light spot position detection
Measurement equipment
Structure
Parameter
Photosensitive area
Number of elements
Package
Window material
G6849
φ2/quadrant
4
TO-5
Borosilicate glass
G6849-01
φ1/quadrant
Unit
mm
-
-
-
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Soldering condition
-
260 °C or less, within 10 s
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefcient of ID
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
ID
ΔTID
fc
Ct
Rsh
D*
NEP
Condition
λ=1.3 μm
λ=1.55 μm
VR=1 V
VR=1 V
VR=1 V, RL=50 Ω
λ=1.3 μm, -3 dB
VR=1 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
Min.
-
-
0.8
0.85
-
-
15
-
10
1 × 1012
-
G6849
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.5
1.09
30
100
50
5 × 1012
2 × 10-14
Max.
-
-
-
-
5
-
-
160
-
-
6 × 10-14
Min.
-
-
0.8
0.85
-
-
G6849-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.15
1.09
Max.
-
-
-
-
1.5
-
Unit
μm
μm
A/W
nA
times/°C
80 120 - MHz
-
80
1 × 1012
-
25
200
5 × 1012
1 × 10-14
40
-
-
4 × 10-14
pF
MΩ
cm·Hz1/2/W
W/Hz1/2
The G6849 series may be damaged by Electro Static Discharge. Be carefull when using the G6849 series.
www.hamamatsu.com
1

PagesPages 4
Télécharger [ G6849-01 ]


Fiche technique recommandé

No Description détaillée Fabricant
G6849-01 InGaAs PIN photodiode Hamamatsu Corporation
Hamamatsu Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche