|
|
Numéro de référence | F12N65 | ||
Description | PJF12N65 | ||
Fabricant | Pan Jit International | ||
Logo | |||
1 Page
PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
2
3
D
S
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
TYPE
PJP12N65
PJF12N65
MARKING
P12N65
F12N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
2 Drain
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
Symbol PJP12N65 PJF12N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 1 2
12
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
48
175
1.4
48
52
0.42
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=12A, VDD=90V, L=12mΗ
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
990
0.7 2.4
Junction-to Ambient Thermal Resistance
RθJA
62.5
100
Note : 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1
|
|||
Pages | Pages 6 | ||
Télécharger | [ F12N65 ] |
No | Description détaillée | Fabricant |
F12N60C | FQPF12N60C | Fairchild Semiconductor |
F12N65 | PJF12N65 | Pan Jit International |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |