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Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2401

Numéro de référence K2401
Description MOSFET ( Transistor ) - 2SK2401
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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K2401 fiche technique
2SK2401
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2401
Chopper Regulator, DCDC Converter and Motor Drive
Applications
z Low drainsource ON resistance
: RDS (ON) = 0.13 (typ.)
z High forward transfer admittance : |Yfs| = 17 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
200
200
±20
15
45
75
166
15
7.5
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.67 °C / W
83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.2 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2006-11-20

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