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PDF HFS4N60 Data sheet ( Hoja de datos )

Número de pieza HFS4N60
Descripción 600V N-Channel MOSFET
Fabricantes SEMIHOW 
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No Preview Available ! HFS4N60 Hoja de datos, Descripción, Manual

July 2005
HFS4N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 2.0 Ω
ID = 4.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
IDM
Drain Current
– Pulsed
(Note 1)
VGS Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25)
- Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
600
4.0*
2.5*
16*
±30
240
4.0
10
5.5
33
0.26
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.79
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
℃/W
SEMIHOW REV.A0,July 2005

1 page




HFS4N60 pdf
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
SEMIHOW REV.A0,July 2005

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