DataSheetWiki


G1B fiches techniques PDF

General Semiconductor - GLASS PASSIVATED JUNCTION RECTIFIER

Numéro de référence G1B
Description GLASS PASSIVATED JUNCTION RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





1 Page

No Preview Available !





G1B fiche technique
G1A THRU G1M
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
DO-204AP
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.150 (3.8)
0.100 (2.5)
DIA.
0.240 (6.1)
MAX.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
FEATURES
High temperature metallurgically bonded
constructed rectifiers
Glass passivated cavity-free junction in
D0-204AP package
Hermetically sealed package
1.0 ampere operation
at TA=100°C with no
thermal runaway
Typical IR less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AP solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS G1A G1B
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
VRRM
VRMS
VDC
I(AV)
IFSM
50 100
35 70
50 70
Maximum instantaneous forward voltage at 1.0A
Maximum full load reverse current, full cycle average
0.375” (9.5mm) lead length at TA=100°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=150°C
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VF
IR(AV)
IR
trr
CJ
RΘJL
TJ, TSTG
1.2
NOTES:
(1) Measured with IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length P.C.B. mounted
G1D G1G G1J G1K G1M UNITS
200 400 600 800 1000 Volts
140 280 420 560 700 Volts
200 400 600 800 1000 Volts
1.0 Amp
50.0
1.1
200.0
2.0
100.0
1.5
15.0
55.0
65 to +175
Amps
Volts
µA
µA
µs
pF
°C/W
°C
4/98

PagesPages 2
Télécharger [ G1B ]


Fiche technique recommandé

No Description détaillée Fabricant
G1-200B-85-1.6 Processor Series Low Power Integrated x86 Solution National Semiconductor
National Semiconductor
G1-200P-85-1.6 Processor Series Low Power Integrated x86 Solution National Semiconductor
National Semiconductor
G1-233B-85-1.8 Processor Series Low Power Integrated x86 Solution National Semiconductor
National Semiconductor
G1-233P-85-1.8 Processor Series Low Power Integrated x86 Solution National Semiconductor
National Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche