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PDF IRF7105 Data sheet ( Hoja de datos )
| Número de pieza | IRF7105 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7105 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
S1
G1
S2
G2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
PD - 91097E
IRF7105
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
25V
-25V
D2 RDS(on) 0.10Ω 0.25Ω
ID 3.5A -2.3A
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
14 -10
2.0
0.016
± 20
3.0 -3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Min.
Typ.
Max.
62.5
Units
°C/W
1
07/18/03
1 page  
P-Channel
IRF7105
-VDS , Drain-to-Source Voltage ( V )
Fig 12. Typical Output Characteristics
-VDS , Drain-to-Source Voltage ( V )
Fig 13. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
Fig 14. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
Fig 15. Normalized On-Resistance
Vs. Temperature
-VDS , Drain-to-Source Voltage ( V )
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
QG , Total Gate Charge ( nC )
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7105.PDF ] | |
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