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Zetex Semiconductors - NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

Numéro de référence FZT849
Description NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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FZT849 fiche technique
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; RCE(sat)36mat 5A
* 7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
* Ptot =3 Watts
PARTMARKING DETAILS - FZT849
COMPLEMENTARY TYPE - FZT949
FZT849
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80 V
Collector-Emitter Voltage
VCEO
30 V
Emitter-Base Voltage
VEBO
6V
Peak Pulse Current
ICM 20 A
Continuous Collector Current
IC
7A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
3 - 257

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