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PDF FZT651 Data sheet ( Hoja de datos )
| Número de pieza | FZT651 | |
| Descripción | NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
FZT651
C
COMPLEMENTARY TYPE FZT751
PARTMARKING DETAIL FZT651
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80 V
Collector-Emitter Voltage
VCEO
60 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 6 A
Continuous Collector Current
IC 3 A
Power Dissipation at Tamb=25°C
Ptot 2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 60
V IC=10mA*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
0.1 µA
10 µA
0.1 µA
0.12 0.3
0.43 0.6
V
V
0.9 1.25 V
VCB=60V
VCB=60V,Tamb=100°C
VEB=4V
IC=1A, IB=100mA*
IC=3A, IB=300mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.8 1 V IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
70 200
100 200 300
80 170
40 80
IC=50mA, VCE =2V*
IC=500mA, VCE=2V*
IC=1A, VCE =2V*
IC=2A, VCE =2V*
Transition Frequency
fT
140 175
MHz
IC=100mA, VCE =5V
f=100MHz
Switching Times
t on
45 ns
t off 800 ns
Output Capacitance
Cobo
30 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
IC=500mA, VCC =10V
IB1=IB2=50mA
VCB =10V, f=1MHz
3 - 207
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT651.PDF ] | |
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