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Naina Semiconductor - Glass Passivated Single-Phase Bridge Rectifier

Numéro de référence GBPC35W
Description Glass Passivated Single-Phase Bridge Rectifier
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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GBPC35W fiche technique
Naina Semiconductor Ltd.
GBPC35-
GBPC35W
Glass Passivated Single-Phase Bridge Rectifier, 35A
Features
Glass passivated chip junction
Low reverse leakage current
High surge current capability
Low power loss
High efficiency
Electrically isolated metal case for
maximum heat dissipation
Mechanical Data
Case: Molded plastic body with heatsink
Terminals: Plated lead Solderable (Add “W” suffix for Wire Leads)
Polarity: As marked on Case
Mounting: Through hole for #10 Screw
Mounting Torque: 20 in-lbs max.
Weight: 18 grams (approx)
Maximum Ratings & Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
GBPC35(W)
Symbol
Units
005 01 02 04 06 08 10 12
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800 1000 1200
V
Maximum RMS voltage
VRMS
35 70 140 280 420 560 700 840
V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 1200 V
Average rectified output current
IO
35 A
Non-repetitive peak forward surge current,
single half sine-wave superimposed on rated
IFSM
400
A
load (JEDEC method)
DC forward voltage drop per element @17.5A
Peak reverse current at rated DC TC = 25oC
blocking voltage
TC = 125oC
VF
IR
1.1 V
5.0
µA
500
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
CJ
RθJ-C
300 pF
1.4 oC/W
RMS isolation voltage
Operating and Storage temperature
VISO
TJ, TSTG
2500
-55 to +150
V
oC
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from Junction to Case per leg
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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