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Naina Semiconductor - Press Fit Triac

Numéro de référence NPT30
Description Press Fit Triac
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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NPT30 fiche technique
Naina Semiconductor Ltd.
Press Fit Triac ½”, 30 Amps
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
Metric thread type available
Low thermal resistance
NPT30
TO-203/F
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameter
Symbol
200
Maximum repetitive peak reverse voltage (1), VRRM
400
600
RMS on-state current
Non-repetitive peak surge on-state current, one cycle
Peak gate trigger current
IT(RMS)
ITSM
IGTM
Peak gate power dissipation @ IGT ≤ IGTM
Average gate power dissipation
PGM
PG(AV)
Peak off-state current (1)
Maximum instantaneous forward voltage drop (1)
IDRM & IRRM
VTM
DC holding current (1)
Critical rate-of-rise of off-state voltage (1)
IH
Critical dv/dt
Critical rate-of-rise of commutation voltage (1)
Commutating dv/dt
DC gate trigger current
(T2+ Gate +, T2 - Gate -)
Quads I and III
(T2+ Gate - , T2 - Gate +)
Quads II and IV
IGT
DC gate trigger voltage
Gate controlled turn-on time
VGT
Tgt
Part Numbers
NPT302
NPT304
NPT306
30
300
12
40
0.75
1.0
2.0
60
200
3
100
150
2.5
3
Units
V
A
A
A
W
W
mA
V
mA
V/µsec
V/µsec
mA
V
µsec
Thermal and Mechanical Specifications (TA = 25oC, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
TJ
Maximum storage temperature range
Tstg
Maximum thermal resistance, junction to case
Rθ(J-C)
Approximate weight
W
Values
- 40 to +110
- 40 to +150
1.8
15
Units
oC
oC
oC/W
g
Notes:
(1) All values apply in either direction
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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