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Numéro de référence | 100NT | ||
Description | Phase Control Thyristors | ||
Fabricant | Naina Semiconductor | ||
Logo | |||
1 Page
Naina Semiconductor Ltd.
100NT
Phase Control Thyristors, 100A
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Metric thread type available
• Low thermal resistance
TO-209AC (TO-94)
Voltage Ratings (TJ = 25oC, unless otherwise noted)
Type number Voltage Code
VDRM/VRRM, Maximum repetitive
peak and off-state voltage
(V)
20 200
40 400
60 600
100NT
80
800
100 1000
120 1200
160 1600
VRSM, Maximum non-
repetitive peak voltage
(V)
300
500
700
900
1100
1300
1700
IDRM/IRRM, Maximum at
TJ=TJ Maximum
(mA)
15
Electrical Ratings (TJ = 25oC, unless otherwise noted)
Parameters
Maximum on-state average current
TJ = 85oC
Maximum RMS on-state current
Maximum peak, one cycle non-repetitive surge current
Maximum I2t for fusing
Maximum peak on-state voltage
Maximum holding current
Maximum latching current
TJ = 25oC, 10 ms
TJ = 130oC, 10 ms
TJ = 25oC, 10 ms
TJ = 130oC, 10 ms
TJ = 25oC
TJ = 25oC
TJ = 25oC
Maximum rate of rise of turn-on current
TJ = TJ max.
Maximum critical rate of rise of off-state voltage
Maximum gate current required to trigger
Maximum gate voltage required to trigger
TJ = TJ max.
TJ = 25oC
TJ = 25oC
Symbol
IT(AV)
IT(RMS)
ITSM
I2t
VTM
IH
IL
di/dt
dv/dt
IGT
VGT
Values
100
157
2000
1750
20000
15300
1.75
200
400
150
500
150
3
Units
A
A
A
A2s
V
mA
mA
A/µs
V/µs
mA
V
Thermal and Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
TJ
TStg
Rth(JC)
Mounting torque
F
Approximate weight
W
Values
- 40 to +130
- 50 to +150
0.25
25
250
Units
oC
oC
oC/W
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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Pages | Pages 2 | ||
Télécharger | [ 100NT ] |
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