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Roithner LaserTechnik - High Power Infrared Laser Diode

Numéro de référence RLT9830MG-N
Description High Power Infrared Laser Diode
Fabricant Roithner LaserTechnik 
Logo Roithner LaserTechnik 





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RLT9830MG-N fiche technique
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: [email protected] http://www.roithner-laser.com
RLT9830MG-N TECHNICAL DATA
High Power Infrared Laserdiode
Structure: index guided, single transverse mode
Lasing wavelength: 980 nm typ.
Output power: 30 mW cw
Package: 5.6 mm, TO-18
PIN CONNECTION:
NOTE!
LASERDIODE
MUST BE COOLED!
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operation Case Temperature
Storage Temperature
SYMBOL
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
30
2
30
-10 .. +60
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
Operation Current
Operating Voltage
Lasing Wavelength
Beam Divergence
Ith
Iop
Vop
λp
θ//
cw
Po = 30 mW
Po = 30 mW
Po = 30 mW
Po = 30 mW
Beam Divergence θPo = 30 mW
Slope Efficiency
η
cw
Monitor Current
Im Po = 30 mW
MIN
10
970
7
30
0.5
TYP
15
60
1.5
980
8
33
0.7
0.75
MAX
20
80
1.7
983
12
38
1
1
UNIT
mA
mA
V
nm
°
°
mW/mA
mA

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