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Roithner - High Power Infrared Laser Diode

Numéro de référence RLT808500G
Description High Power Infrared Laser Diode
Fabricant Roithner 
Logo Roithner 





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RLT808500G fiche technique
RLT808500G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: High Efficiency MOVCD Quantum Well Design
Lasing wavelength: 808 nm typ.
Output power: 500 mW, cw
NOTE!
Package: 9 mm
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
550
2
30
-10 .. +40
-40 .. +80
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX
Optical Output Power
Threshold Current
Operation Current
Operation Voltage
Slope Efficiency
Po
Ith
Iop
Vop
η
kink free
cw
Po = 500 mW
Po = 500 mW
cw
500
150 180
650 700 750
1.85 2.0
0.8 1.0 1.1
Lasing Wavelength
λ
Po = 500 mW 805 808 811
Beam Divergence
Beam Divergence
Lasing Aperture
Recommended Operating
Temperature
θ//
θ
A
Top
Po = 500 mW
Po = 500 mW
Po = 500 mW
cw
5 9 12
30 35 45
50x1
20 25 40
Monitor Current
Im Po = 500 mW
0.6 1.5
UNIT
mW
mA
mA
V
W/A
nm
°
°
µm²
°C
mA
10.08.2010
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