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Numéro de référence | RLT80805MGS | ||
Description | Laser Diode | ||
Fabricant | Roithner | ||
Logo | |||
RLT80805MGS
Laser Diode Technical Data
ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC )
Features
• Index Guided MQW Structure
• Wavelength : 808 nm (Typ.)
• Optical Power : 5 mW CW
• Threshold Current : 25 mA ( Typ. )
• Package Style : TO-18 (5.6 mmØ)
DESCRIPTION
SYMBOL RATED VALUE
Optical Power (mW)
Operation Temperature (oC)
Storage Temperature (oC)
LD Reverse Voltage (V)
PD Reverse Voltage (V)
Po
Top
Tstg
VLDR
VPDR
5
-10 to +50
-40 to +85
2
30
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC )
DESCRIPTION
SYMBOL
Lasing Wavelength (nm)
Threshold Current (mA)
Operating Current (mA)
Operating Voltage (V)
Monitor Current (mA)
Slope Efficiency (mW/mA)
Beam Divergence ⎪⎢ (°)
Beam Divergence ⊥ (°)
Astigmatism (μm)
λp
Ith
Iop
Vop
Im
η
θ⎪⎢
θ⊥
As
MIN.
803
20
17
1.8
0.1
0.5
8
25
*
TYPICAL
808
25
30
2.0
0.3
0.7
10
30
11
MAX.
815
50
35
2.5
0.6
0.9
12
40
*
TEST CONDITION
Po=5mW
Po=5mW
Po=5mW
Po=5mW
Po=5mW, VR=5V
***
Po=5mW
Po=5mW
Po=5mW, NA=0.4
03.08.2010
rlt80805mgs.doc
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Pages | Pages 1 | ||
Télécharger | [ RLT80805MGS ] |
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